W9412G6JH
10.6 AC Characteristics and Operating Condition
SYM.
PARAMETER
MIN.
-4
MAX.
-5/-5I/-5K
MIN. MAX.
-6/-6I
MIN. MAX.
UNIT
NOTES
t RC
t RFC
Active to Ref/Active Command Period
Ref to Ref/Active Command Period
48
60
50
70
54
70
t RAS
Active to Precharge Command Period
40
70000
40
70000
42
100000
nS
t RCD
t RAP
Active to Read/Write Command Delay Time
Active to Read with Auto-precharge Enable
16
16
15
15
18
18
t CCD
Read/Write(a)
Period
to
Read/Write(b)
Command
1
1
1
t CK
t RP
Precharge to Active Command Period
16
15
18
t RRD
t WR
Active(a) to Active(b) Command Period
Write Recovery Time
12
12
10
15
12
15
nS
t DAL
Auto-precharge Write Recovery + Precharge
Time
(t WR /t CK )
+
(t RP /t CK )
(t WR /t CK )
+
(t RP /t CK )
(t WR /t CK )
+
(t RP /t CK )
t CK
18
CL = 2
-
-
7.5
12
7.5
12
t CK
t AC
CLK Cycle Time
Data Access Time from CLK, CLK
CL = 2.5
CL = 3
CL = 4
-
4
4
-0.65
-
12
12
0.65
6
5
-
-0.7
12
12
-
0.7
6
6
-
-0.7
12
12
-
0.7
nS
16
t DQSCK DQS Output Access Time from CLK, CLK
t DQSQ
Data Strobe Edge to Output Data Edge Skew
-0.55
0.55
0.4
-0.6
0.6
0.4
-0.6
0.6
0.4
t CH
t CL
CLk High Level Width
CLK Low Level Width
0.45
0.45
0.55
0.55
0.45
0.45
0.55
0.55
0.45
0.45
0.55
0.55
t CK
11
t HP
t QH
CLK Half Period (minimum of actual t CH, t CL )
DQ Output Data Hold Time from DQS
min
(t CL ,t CH )
t HP -0.5
min,
(t CL ,t CH )
t HP -0.5
min,
(t CL ,t CH )
t HP -0.5
nS
t RPRE
t RPST
DQS Read Preamble Time
DQS Read Postamble Time
0.9
0.4
1.1
0.6
0.9
0.4
1.1
0.6
0.9
0.4
1.1
0.6
t CK
11
t DS
DQ and DM Setup Time
0.4
0.4
0.4
t DH
t DIPW
t DQSH
DQ and DM Hold Time
DQ and DM Input Pulse Width (for each input)
DQS Input High Pulse Width
0.4
1.75
0.35
0.4
1.75
0.35
0.4
1.75
0.35
nS
t DQSL
t DSS
t DSH
DQS Input Low Pulse Width
DQS Falling Edge to CLK Setup Time
DQS Falling Edge Hold Time from CLK
0.35
0.2
0.2
0.35
0.2
0.2
0.35
0.2
0.2
t CK
11
t WPRES Clock to DQS Write Preamble Set-up Time
0
0
0
nS
Publication Release Date: Jan. 14, 2014
- 26 -
Revision: A04
相关PDF资料
W9425G6EH-5 IC DDR-400 SDRAM 256MB 66TSSOPII
W9425G6JH-5I IC DDR SDRAM 256MBIT 66TSOPII
W947D2HBJX5E IC LPDDR SDRAM 128MBIT 90VFBGA
W948D2FBJX5E IC LPDDR SDRAM 256MBIT 90VFBGA
W949D2CBJX5E IC LPDDR SDRAM 512MBIT 90VFBGA
W971GG6JB25I IC DDR2 SDRAM 1GBIT 84WBGA
W971GG8JB-25 IC DDR2 SDRAM 1GBIT 60WBGA
W9725G6IB-25 IC DDR2-800 SDRAM 256MB 84-WBGA
相关代理商/技术参数
W9412G6JH-5TR 制造商:Winbond Electronics Corp 功能描述:128M DDR SDRAM X16 200MHZ, 65N
W942 制造商:Performance Tool 功能描述:6 Piece Hook and Pick Set 制造商:PERFORMANCE TOOLS 功能描述:6 PC HOOK AND PICK SET
W942508BH 制造商:未知厂家 制造商全称:未知厂家 功能描述:DRAM
W942508CH 制造商:WINBOND 制造商全称:Winbond 功能描述:8M x 4 BANKS x 8 BIT DDR SDRAM
W942508CH-5 制造商:WINBOND 制造商全称:Winbond 功能描述:8M x 4 BANKS x 8 BIT DDR SDRAM
W942508CH-6 制造商:WINBOND 制造商全称:Winbond 功能描述:8M x 4 BANKS x 8 BIT DDR SDRAM
W942508CH-7 制造商:WINBOND 制造商全称:Winbond 功能描述:8M x 4 BANKS x 8 BIT DDR SDRAM
W942508CH-75 制造商:WINBOND 制造商全称:Winbond 功能描述:8M x 4 BANKS x 8 BIT DDR SDRAM